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ON Semiconductor

64-2030-11　FQA70N10 N-Channel MOSFET, 70 A, 100 V QFET, 3-Pin TO-3PN ON Semiconductor　FQA70N10

Features

  • QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:70 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:23 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:TO-3PN
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:214 W
  • Typical Turn-Off Delay Time:130 ns
  • CODE No.:671-4963
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Order No. 64-2030-11
Model No. FQA70N10
Standard price JPY: 600 USD: 3.76
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock

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