64-2030-10 FQA70N10 N-Channel MOSFET, 70 A, 100 V QFET, 3-Pin TO-3PN ON Semiconductor FQA70N10
Features
- QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:70 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:23 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:TO-3PN
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:214 W
- Minimum Operating Temperature:-55 °C
- CODE No.:146-1969
| Order No. | 64-2030-10 | |
|---|---|---|
| Model No. | FQA70N10 | |
| Standard price |
JPY: 11,100
USD: 69.58
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
| Stock in Japan |
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| Supplier Stock |
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