64-2008-72 [Discontinued]FDC653N N-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-23 ON Semiconductor FDC653N
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1set(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:56 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:1.6 W
- Typical Input Capacitance @ Vds:350 pF @ 15 V
- CODE No.:809-0868
| Order No. | 64-2008-72 | |
|---|---|---|
| Model No. | FDC653N | |
| Standard price |
JPY: 1,080
USD: 6.72
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(20pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDC653N N-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-23 ON Semiconductor FDC653N](https://aimg.as-1.co.jp/c/64/2008/72/64200712.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)