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ON Semiconductor

64-2008-67　FDC6401N Dual N-Channel MOSFET, 3 A, 20 V PowerTrench, 6-Pin SOT-23 ON Semiconductor　FDC6401N

Features

  • PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1set(20pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:3 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:106 mΩ
  • Minimum Gate Threshold Voltage:0.5V
  • Maximum Gate Source Voltage:-12 V, +12 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:960 mW
  • Maximum Operating Temperature:+150 °C
  • CODE No.:809-0852
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Order No. 64-2008-67
Model No. FDC6401N
Standard price JPY: 2,660 USD: 16.55
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(20pieces)
Stock in Japan
Supplier Stock

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