64-2005-19 BSP317PH6327XTSA1 P-Channel MOSFET, 430 mA, 250 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP317PH6327XTSA1
Features
- Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant
Spec
- Quantity:1bag(10pieces)
- Channel Type:P
- Maximum Continuous Drain Current:430 mA
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:5 Ω
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:1.8 W
- Typical Turn-Off Delay Time:254 ns
- CODE No.:753-2813
| Order No. | 64-2005-19 | |
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| Model No. | BSP317PH6327XTSA1 | |
| Standard price |
JPY: 1,370
USD: 8.52
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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