64-2005-18 BSP320SH6327XTSA1 N-Channel MOSFET, 2.9 A, 60 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP320SH6327XTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.9 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:120 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:1.8 W
- Transistor Material:Si
- CODE No.:753-2810
| Order No. | 64-2005-18 | |
|---|---|---|
| Model No. | BSP320SH6327XTSA1 | |
| Standard price |
JPY: 1,610
USD: 10.02
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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