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64-2004-93　FQT4N20LTF N-Channel MOSFET, 850 mA, 200 V QFET, 3 + Tab-Pin SOT-223 ON Semiconductor　FQT4N20LTF

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:850 mA
  • Maximum Drain Source Voltage:200 V
  • Maximum Drain Source Resistance:1.35 Ω
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-223
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.2 W
  • Typical Turn-Off Delay Time:15 ns
  • CODE No.:671-1065
  •  
Order No. 64-2004-93
Model No. FQT4N20LTF
Standard price JPY: 960 USD: 5.97
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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