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ON Semiconductor

64-2004-90　FDT439N N-Channel MOSFET, 6.3 A, 30 V, 3+Tab-Pin SOT-223 ON Semiconductor　FDT439N

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:6.3 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:72 mΩ
  • Minimum Gate Threshold Voltage:0.4V
  • Maximum Gate Source Voltage:-8 V, +8 V
  • Package Type:SOT-223
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:3 W
  • Maximum Operating Temperature:+150 °C
  • CODE No.:671-0781
  •  
Order No. 64-2004-90
Model No. FDT439N
Standard price JPY: 870 USD: 5.41
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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