64-2004-42 [Discontinued]IRFM120ATF N-Channel MOSFET, 2.3 A, 100 V, 3 + Tab-Pin SOT-223 ON Semiconductor IRFM120ATF
Features
- Advanced Power MOSFET, Fairchild Semiconductor. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.3 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:200 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.4 W
- Typical Turn-Off Delay Time:36 ns
- CODE No.:166-3594
| Order No. | 64-2004-42 | |
|---|---|---|
| Model No. | IRFM120ATF | |
| Standard price |
JPY: 138,000
USD: 858.64
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRFM120ATF N-Channel MOSFET, 2.3 A, 100 V, 3 + Tab-Pin SOT-223 ON Semiconductor IRFM120ATF](https://aimg.as-1.co.jp/c/64/2004/42/64200349.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)