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ON Semiconductor

64-2004-40　［Discontinued］FQT7N10TF N-Channel MOSFET, 1.7 A, 100 V QFET, 3+Tab-Pin SOT-223 ON Semiconductor　FQT7N10TF

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1set(4000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:1.7 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:350 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:SOT-223
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2 W
  • Dimensions:6.7 x 3.7 x 1.7mm
  • CODE No.:166-3522
  •  
Order No. 64-2004-40
Model No. FQT7N10TF
Standard price JPY: 106,580 USD: 663.14
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(4000pieces)
  Discontinued
Stock in Japan -

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