64-2004-24 [Discontinued]FDT457N N-Channel MOSFET, 5 A, 30 V, 3 + Tab-Pin SOT-223 ON Semiconductor FDT457N
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:60 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3 W
- Minimum Operating Temperature:-65 °C
- CODE No.:166-2705
| Order No. | 64-2004-24 | |
|---|---|---|
| Model No. | FDT457N | |
| Standard price |
JPY: 200,770
USD: 1,249.19
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDT457N N-Channel MOSFET, 5 A, 30 V, 3 + Tab-Pin SOT-223 ON Semiconductor FDT457N](https://aimg.as-1.co.jp/c/64/2004/24/64200349.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)