64-2004-23 [Discontinued]FDT439N N-Channel MOSFET, 6.3 A, 30 V, 3 + Tab-Pin SOT-223 ON Semiconductor FDT439N
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6.3 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:72 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3 W
- Maximum Operating Temperature:+150 °C
- CODE No.:166-2704
| Order No. | 64-2004-23 | |
|---|---|---|
| Model No. | FDT439N | |
| Standard price |
JPY: 162,190
USD: 1,009.15
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDT439N N-Channel MOSFET, 6.3 A, 30 V, 3 + Tab-Pin SOT-223 ON Semiconductor FDT439N](https://aimg.as-1.co.jp/c/64/2004/23/64200349.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)