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64-2003-53　［Discontinued］FQT4N25TF N-Channel MOSFET, 830 mA, 250 V QFET, 3+Tab-Pin SOT-223 ON Semiconductor　FQT4N25TF

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1set(4000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:830 mA
  • Maximum Drain Source Voltage:250 V
  • Maximum Drain Source Resistance:1.75 Ω
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:SOT-223
  • Mounting Type:Surface Mount
  • Pin Count:3 + Tab
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.5 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:145-5667
  •  
Order No. 64-2003-53
Model No. FQT4N25TF
Standard price JPY: 130,680 USD: 813.09
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(4000pieces)
  Discontinued
Stock in Japan -

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