64-1939-33 IXFQ26N50P3 N-Channel MOSFET, 26 A, 500 V HiperFET, Polar3, 3-Pin TO-3P IXYS IXFQ26N50P3
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
Spec
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:26 A
- Maximum Drain Source Voltage:500 V
- Maximum Drain Source Resistance:240 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-3P
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:500 W
- Minimum Operating Temperature:-55 °C
- CODE No.:802-4458
| Order No. | 64-1939-33 | |
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| Model No. | IXFQ26N50P3 | |
| Standard price |
JPY: 3,480
USD: 21.81
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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