IXYS

64-1939-31 [Discontinued]IXFQ28N60P3 N-Channel MOSFET, 28 A, 600 V HiperFET, Polar3, 3-Pin TO-3P IXYS IXFQ28N60P3

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

仕様

  • Quantity:1bag(2pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:28 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:260 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-3P
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:695 W
  • Number of Elements per Chip:1
  • CODE No.:802-4451
  •  
Order No. 64-1939-31
型番 IXFQ28N60P3
標準価格 JPY: 1,180 USD: 7.40
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init"> [Discontinued]IXFQ28N60P3 N-Channel MOSFET, 28 A, 600 V HiperFET, Polar3, 3-Pin TO-3P IXYS IXFQ28N60P3 64-1939-31 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
IXYS

64-1939-31 [Discontinued]IXFQ28N60P3 N-Channel MOSFET, 28 A, 600 V HiperFET, Polar3, 3-Pin TO-3P IXYS IXFQ28N60P3

特徴

  • N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

仕様

  • Quantity:1bag(2pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:28 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:260 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-3P
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:695 W
  • Number of Elements per Chip:1
  • CODE No.:802-4451
  •  
アズワン品番 64-1939-31
型番 IXFQ28N60P3
標準価格 JPY: 1,180 USD: 7.40
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1bag(2pieces)
  <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
Stock in Japan -