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  • CategoriesListed products : 3 milion products"init"> [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3 64-1939-29 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

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    [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3 64-1939-29 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

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    Contact usContact usinit"> [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3 64-1939-29 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
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    • 64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3
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    • 64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3
    IXYS

    64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3

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    • [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3

    Features

    • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

    SpecSpec class="init"> [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3 64-1939-29 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3
    • AXEL GLOBAL
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    • 64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3
    IXYS

    64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3

    • 印刷
    • PDF
    • [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3

    特徴

    • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

    Spec

    • Quantity:1piece
    • Channel Type:N
    • Maximum Continuous Drain Current:32 A
    • Maximum Drain Source Voltage:600 V
    • Maximum Drain Source Resistance:154 mΩ
    • Maximum Gate Threshold Voltage:6.5V
    • Maximum Gate Source Voltage:-30 V, +30 V
    • Package Type:ISOPLUS247
    • Mounting Type:Through Hole
    • Pin Count:3
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:500 W
    • Number of Elements per Chip:1
    • CODE No.:801-1443
    •  
    Order No. 64-1939-29
    Model No. IXFR48N60Q3
    Standard price JPY: 2,510 USD: 15.75
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    Quantity 1piece
      Discontinued
    Stock in Japan -

    This page is the page of [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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      AS ONE AS ONE

      Listed products : 3 milion products
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      • AXEL GLOBAL
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      • Lab Instruments & Supplies
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      • Semiconductors
      • Discrete Semiconductors
      • 64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3
      • AXEL GLOBAL
      • Categories
      • Lab Instruments & Supplies
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      • 64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3
      IXYS

      64-1939-29 [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3

      • Print
      • PDF
      • [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR48N60Q3

      Features

      • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

      Spec

      • Quantity:1piece
      • Channel Type:N
      • Maximum Continuous Drain Current:32 A
      • Maximum Drain Source Voltage:600 V
      • Maximum Drain Source Resistance:154 mΩ
      • Maximum Gate Threshold Voltage:6.5V
      • Maximum Gate Source Voltage:-30 V, +30 V
      • Package Type:ISOPLUS247
      • Mounting Type:Through Hole
      • Pin Count:3
      • Channel Mode:Enhancement
      • Category:Power MOSFET
      • Maximum Power Dissipation:500 W
      • Number of Elements per Chip:1
      • CODE No.:801-1443
      •  
      Order No. 64-1939-29
      Model No. IXFR48N60Q3
      Standard price JPY: 2,510 USD: 15.75
      Excange rate 1USD= 159.42JPY
      Valid price in Japan
      Quantity 1piece
        Discontinued
      Stock in Japan -

      This page is the page of [Discontinued]IXFR48N60Q3 N-Channel MOSFET, 32 A, 600 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

      Explore AXEL

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