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Contact usSearchlass="init"> [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3 64-1939-28 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3
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  • 64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3
IXYS

64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3

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  • [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3

FeaturesFeatures class="init"> [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3 64-1939-28 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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  • 64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3
  • AXEL GLOBAL
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  • 64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3
IXYS

64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3

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  • [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3

特徴

  • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:23 A
  • Maximum Drain Source Voltage:1000 V
  • Maximum Drain Source Resistance:350 mΩ
  • Maximum Gate Threshold Voltage:6.5V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:ISOPLUS247
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:570 W
  • Typical Turn-Off Delay Time:54 ns
  • CODE No.:801-1437
  •  
Order No. 64-1939-28
Model No. IXFR32N100Q3
Standard price JPY: 3,630 USD: 22.77
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in JapanStock in Japanass="init"> [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3 64-1939-28 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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すべてのカテゴリ
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Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
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  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • RS Components
  • 64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3
IXYS

64-1939-28 [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3

  • 印刷
  • PDF
  • [Discontinued]IXFR32N100Q3 N-Channel MOSFET, 23 A, 1000 V HiperFET, Q3-Class, 3-Pin ISOPLUS247 IXYS IXFR32N100Q3

特徴

  • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

仕様

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:23 A
  • Maximum Drain Source Voltage:1000 V
  • Maximum Drain Source Resistance:350 mΩ
  • Maximum Gate Threshold Voltage:6.5V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:ISOPLUS247
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:570 W
  • Typical Turn-Off Delay Time:54 ns
  • CODE No.:801-1437
  •  
アズワン品番 64-1939-28
型番 IXFR32N100Q3
標準価格 JPY: 3,630 USD: 22.77
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1piece
  <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
在庫数 -

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