64-1935-06 ［Discontinued］ON Semiconductor NGTB30N135IHR1WG IGBT, 60 A 1350 V, 3-Pin TO-247 NGTB30N135IHR1WG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:60 A
- Maximum Collector Emitter Voltage:1350 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:394 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.4mm
- Dimensions:16.25 x 5.3 x 21.4mm
- Gate Capacitance:5530pF
- CODE No.:922-9550
| Order No. | 64-1935-06 | |
|---|---|---|
| Model No. | NGTB30N135IHR1WG | |
| Standard price |
JPY: 1,160
USD: 7.22
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
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| Stock in Japan | - | |