64-1923-62 PD55003L-E N-Channel MOSFET, 2.5 A, 40 V, 14-Pin PowerFLAT STMicroelectronics PD55003L-E
Features
- RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.5 A
- Maximum Drain Source Voltage:40 V
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-15 V, +15 V
- Package Type:PowerFLAT
- Mounting Type:Surface Mount
- Pin Count:14
- Channel Mode:Enhancement
- Category:RF MOSFET
- Maximum Power Dissipation:14 W
- Number of Elements per Chip:1
- CODE No.:920-9026
| Order No. | 64-1923-62 | |
|---|---|---|
| Model No. | PD55003L-E | |
| Standard price |
JPY: 4,693,000
USD: 29,199.85
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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