64-1923-46 STP11NM80 N-Channel MOSFET, 11 A, 800 V MDmesh, 3-Pin TO-220 STMicroelectronics STP11NM80
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64-1923-46 STP11NM80 N-Channel MOSFET, 11 A, 800 V MDmesh, 3-Pin TO-220 STMicroelectronics STP11NM80 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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64-1923-46 STP11NM80 N-Channel MOSFET, 11 A, 800 V MDmesh, 3-Pin TO-220 STMicroelectronics STP11NM80
-
特徴
- N-Channel MDmesh™, 800V/1500V, STMicroelectronics
仕様
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:11 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:400 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Width:4.6mm
- CODE No.:920-8852
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Order No.
64-1923-46
型番
STP11NM80
標準価格
JPY: 31,000
USD: 194.46
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1set(50pieces)
在庫数
Supplier Stock
64-1923-46 STP11NM80 N-Channel MOSFET, 11 A, 800 V MDmesh, 3-Pin TO-220 STMicroelectronics STP11NM80
特徴
- N-Channel MDmesh™, 800V/1500V, STMicroelectronics
仕様
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:11 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:400 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Width:4.6mm
- CODE No.:920-8852
| Order No. | 64-1923-46 | |
|---|---|---|
| 型番 | STP11NM80 | |
| 標準価格 |
JPY: 31,000
USD: 194.46
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
| 在庫数 |
|
|
| Supplier Stock |
|
|