64-1922-06 IXFB210N30P3 N-Channel MOSFET, 210 A, 300 V HiperFET, Polar3, 3-Pin PLUS264 IXYS IXFB210N30P3
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
Spec
- Quantity:1set(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:210 A
- Maximum Drain Source Voltage:300 V
- Maximum Drain Source Resistance:14.5 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PLUS264
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.89 kW
- Typical Input Capacitance @ Vds:16200 pF @ 25 V
- CODE No.:920-0987
| Order No. | 64-1922-06 | |
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| Model No. | IXFB210N30P3 | |
| Standard price |
JPY: 140,000
USD: 877.58
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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