64-1921-75 IXFK26N120P N-Channel MOSFET, 26 A, 1200 V HiperFET, Polar, 3-Pin TO-264 IXYS IXFK26N120P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:26 A
- Maximum Drain Source Voltage:1200 V
- Maximum Drain Source Resistance:460 mΩ
- Maximum Gate Threshold Voltage:6.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-264
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:960 W
- Typical Turn-On Delay Time:56 ns
- CODE No.:920-0877
| Order No. | 64-1921-75 | |
|---|---|---|
| Model No. | IXFK26N120P | |
| Standard price |
JPY: 159,000
USD: 997.37
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(25pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|