64-1921-45 [Discontinued]IXFN48N60P N-Channel MOSFET, 40 A, 600 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN48N60P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:140 mΩ
- Maximum Gate Threshold Voltage:5.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SOT-227B
- Mounting Type:Panel Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:625 W
- Number of Elements per Chip:1
- CODE No.:920-0767
| Order No. | 64-1921-45 | |
|---|---|---|
| Model No. | IXFN48N60P | |
| Standard price |
JPY: 57,000
USD: 354.65
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IXFN48N60P N-Channel MOSFET, 40 A, 600 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN48N60P](https://aimg.as-1.co.jp/c/64/1921/45/64192145.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)