64-1921-40 IXFN140N30P N-Channel MOSFET, 115 A, 300 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN140N30P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:115 A
- Maximum Drain Source Voltage:300 V
- Maximum Drain Source Resistance:24 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-227B
- Mounting Type:Panel Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:700 W
- Length:38.2mm
- CODE No.:920-0748
| Order No. | 64-1921-40 | |
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| Model No. | IXFN140N30P | |
| Standard price |
JPY: 66,500
USD: 417.14
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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