64-1917-98 ［Discontinued］IRF7309PBF Dual N/P-Channel MOSFET, 3 A, 4 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7309PBF
Features
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity:1set(95pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:3 A, 4 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:50 mΩ, 100 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.4 W
- Series:HEXFET
- CODE No.:919-5009
| Order No. | 64-1917-98 | |
|---|---|---|
| Model No. | IRF7309PBF | |
| Standard price |
JPY: 4,000
USD: 25.07
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(95pieces) | |
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| Stock in Japan | - | |