64-1917-88 [Discontinued]IRF7389PBF Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7389PBF
Features
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity:1set(95pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:5.3 A, 7.3 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:29 mΩ, 58 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Height:1.5mm
- CODE No.:919-4949
| Order No. | 64-1917-88 | |
|---|---|---|
| Model No. | IRF7389PBF | |
| Standard price |
JPY: 7,940
USD: 49.81
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1set(95pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF7389PBF Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7389PBF](https://aimg.as-1.co.jp/c/64/1917/88/64191788.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)