Infineon

64-1917-88 [Discontinued]IRF7389PBF Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7389PBF

Features

  • Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Spec

  • Quantity:1set(95pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:5.3 A, 7.3 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:29 mΩ, 58 mΩ
  • Maximum Gate Threshold Voltage:1V
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.5 W
  • Height:1.5mm
  • CODE No.:919-4949
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Order No. 64-1917-88
Model No. IRF7389PBF
Standard price JPY: 7,940 USD: 49.81
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1set(95pieces)
  Discontinued
Stock in Japan -