N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
Quantity:1set(50pieces)
Channel Type:N
Maximum Continuous Drain Current:130 A
Maximum Drain Source Voltage:40 V
Maximum Drain Source Resistance:7 mΩ
Maximum Gate Threshold Voltage:1V
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-16 V, +16 V
Package Type:TO-220AB
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:200 W
Number of Elements per Chip:1
CODE No.:919-4943
Order No.Order No.ss="init">
64-1917-86 IRL1004PBF N-Channel MOSFET, 130 A, 40 V LogicFET, 3-Pin TO-220AB Infineon IRL1004PBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
