64-1917-73　IRF9Z34NPBF P-Channel MOSFET, 19 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRF9Z34NPBF

Features

P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

Quantity:1set(50pieces)
Channel Type:P
Maximum Continuous Drain Current:19 A
Maximum Drain Source Voltage:55 V
Maximum Drain Source Resistance:100 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:TO-220AB
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:68 W
Typical Turn-Off Delay Time:30 ns
CODE No.:919-4867

Order No.	64-1917-73
Model No.	IRF9Z34NPBF
Standard price	JPY: 4,190 USD: 26.27 Excange rate 1USD= 159.53JPY Valid price in Japan
Quantity	1set(50pieces)
Stock in Japan
Supplier Stock

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