64-1917-65 ［Discontinued］IRF5305SPBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF5305SPBF
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［Discontinued］IRF5305SPBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF5305SPBF 64-1917-65 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1917-65 ［Discontinued］IRF5305SPBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF5305SPBF
Features
- P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:55 V
- Maximum Drain Source Resistance:60 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.8 W
- Number of Elements per Chip:1
- CODE No.:919-4836
Order No.Order No.ss="init"> ［Discontinued］IRF5305SPBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF5305SPBF 64-1917-65 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1917-65 ［Discontinued］IRF5305SPBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF5305SPBF
特徴
- P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:55 V
- Maximum Drain Source Resistance:60 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.8 W
- Number of Elements per Chip:1
- CODE No.:919-4836
Order No. 64-1917-65 型番 IRF5305SPBF Standard price JPY: 5,200 USD: 32.62 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1set(50pieces) 
［Discontinued］IRF5305SPBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF5305SPBF 64-1917-65 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1917-65 ［Discontinued］IRF5305SPBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF5305SPBF
特徴
- P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:55 V
- Maximum Drain Source Resistance:60 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.8 W
- Number of Elements per Chip:1
- CODE No.:919-4836
アズワン品番 64-1917-65 型番 IRF5305SPBF 標準価格 JPY: 5,200 USD: 32.62 Excange rate 1USD= 159.42JPY
Valid price in Japan入り数 1set(50pieces)
在庫数 - -
