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Infineon

64-1917-64　［Discontinued］IRF7317PBF Dual N/P-Channel MOSFET, 5.3 A, 6.6 A, 20 V HEXFET, 8-Pin SOIC Infineon　IRF7317PBF

Features

  • Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Spec

  • Quantity:1set(95pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:5.3 A, 6.6 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:29 mΩ, 58 mΩ
  • Maximum Gate Threshold Voltage:0.7V
  • Minimum Gate Threshold Voltage:0.7V
  • Maximum Gate Source Voltage:-12 V, +12 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2 W
  • Number of Elements per Chip:2
  • CODE No.:919-4832
  •  
Order No. 64-1917-64
Model No. IRF7317PBF
Standard price JPY: 5,260 USD: 32.97
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(95pieces)
  Discontinued
Stock in Japan -

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