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[Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF 64-1917-62 【AXEL GLOBAL】 アズワン
取扱点数300万点
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Contact usContact usinit">
[Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF 64-1917-62 【AXEL GLOBAL】 アズワン
取扱点数300万点
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64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
AXEL GLOBAL
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Lab Instruments & Supplies
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64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
Infineon
64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
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Features
N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
SpecSpec class="init">
[Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF 64-1917-62 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
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Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
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Food Sanitation & Inspection
Office Supplies and Stationery
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AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
Infineon
64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
印刷
PDF
特徴
N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
Quantity:1set(75pieces)
Channel Type:N
Maximum Continuous Drain Current:9.4 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:210 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:48 W
Number of Elements per Chip:1
CODE No.:919-4823
Order No.Order No.ss="init">
[Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF 64-1917-62 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
Education, Learning Supplies
Specially Ordered Item
Featured Products
Contact us
Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
Infineon
64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
印刷
PDF
特徴
N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
Quantity:1set(75pieces)
Channel Type:N
Maximum Continuous Drain Current:9.4 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:210 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:48 W
Number of Elements per Chip:1
CODE No.:919-4823
アズワン品番
64-1917-62
Model No.
IRFR120NPBF
標準価格
JPY:
3,550
USD:
22.09
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1set(75pieces)
Stock in Japan
-
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