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[Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF 64-1917-62 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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Contact usContact usinit"> [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF 64-1917-62 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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Infineon

64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF

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  • [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF

Features

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

SpecSpec class="init"> [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF 64-1917-62 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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  • AXEL GLOBAL
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  • 64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
  • AXEL GLOBAL
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  • 64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
Infineon

64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF

  • 印刷
  • PDF
  • [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF

特徴

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity:1set(75pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:9.4 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:210 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:48 W
  • Number of Elements per Chip:1
  • CODE No.:919-4823
  •  
Order No.Order No.ss="init"> [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF 64-1917-62 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • RS Components
  • 64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
Infineon

64-1917-62 [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF

  • 印刷
  • PDF
  • [Discontinued]IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF

特徴

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity:1set(75pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:9.4 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:210 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:48 W
  • Number of Elements per Chip:1
  • CODE No.:919-4823
  •  
アズワン品番 64-1917-62
Model No. IRFR120NPBF
標準価格 JPY: 3,550 USD: 22.09
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(75pieces)
  Discontinued
Stock in Japan -

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