64-1917-62 ［Discontinued］IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF
Features
- N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(75pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9.4 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:210 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:48 W
- Number of Elements per Chip:1
- CODE No.:919-4823
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64-1917-62 ［Discontinued］IRFR120NPBF N-Channel MOSFET, 9.4 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR120NPBF特徴
仕様
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