64-1917-45 [Discontinued]IRLML5103TRPBF P-Channel MOSFET, 760 mA, 30 V HEXFET, 3-Pin SOT-23 Infineon IRLML5103TRPBF
Features
- P-Channel Power MOSFET 30V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:760 mA
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:600 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:540 mW
- Number of Elements per Chip:1
- CODE No.:919-4744
| Order No. | 64-1917-45 | |
|---|---|---|
| Model No. | IRLML5103TRPBF | |
| Standard price |
JPY: 57,300
USD: 359.18
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRLML5103TRPBF P-Channel MOSFET, 760 mA, 30 V HEXFET, 3-Pin SOT-23 Infineon IRLML5103TRPBF](https://aimg.as-1.co.jp/c/64/1917/45/64191745.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)