64-1917-40 ［Discontinued］IRF7530TRPBF Dual N-Channel MOSFET, 5.4 A, 20 V HEXFET, 8-Pin MSOP Infineon IRF7530TRPBF
特徴
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5.4 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:30 mΩ
- Maximum Gate Threshold Voltage:1.2V
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:MSOP
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.3 W
- Transistor Material:Si
- CODE No.:919-4729
| アズワン品番 | 64-1917-40 | |
|---|---|---|
| 型番 | IRF7530TRPBF | |
| 標準価格 |
JPY: 254,000
USD: 1,593.28
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| 入り数 | 1set(4000pieces) | |
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| 在庫数 | - | |