64-1916-87 SI7288DP-T1-GE3 Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO Vishay SI7288DP-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:20 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:22 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:15.6 W
- Number of Elements per Chip:2
- CODE No.:919-4334
| Order No. | 64-1916-87 | |
|---|---|---|
| Model No. | SI7288DP-T1-GE3 | |
| Standard price |
JPY: 492,000
USD: 3,084.06
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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