64-1916-85 ［Discontinued］SI4712DY-T1-GE3 N-Channel MOSFET, 14.6 A, 30 V SkyFET, 8-Pin SOIC Vishay SI4712DY-T1-GE3
Features
- N-Channel MOSFET, Plus Integrated Schottky (SkyFET®), Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:14.6 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:16.5 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:5 W
- Number of Elements per Chip:1
- CODE No.:919-4328
| Order No. | 64-1916-85 | |
|---|---|---|
| Model No. | SI4712DY-T1-GE3 | |
| Standard price |
JPY: 132,000
USD: 827.43
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
|
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| Stock in Japan | - | |