64-1916-84 [Discontinued]SI5935CDC-T1-GE3 Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3
Features
- Dual P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:3.8 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:156 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:1206 ChipFET
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.1 W
- Typical Turn-Off Delay Time:25 ns
- CODE No.:919-4325
| Order No. | 64-1916-84 | |
|---|---|---|
| Model No. | SI5935CDC-T1-GE3 | |
| Standard price |
JPY: 146,000
USD: 915.19
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI5935CDC-T1-GE3 Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3](https://aimg.as-1.co.jp/c/64/1916/84/64191684.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)