64-1916-78 ［Discontinued］SISS27DN-T1-GE3 P-Channel MOSFET, 23 A, 30 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISS27DN-T1-GE3
特徴
- P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
仕様
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:23 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:9 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:57 W
- Number of Elements per Chip:1
- CODE No.:919-4299
| アズワン品番 | 64-1916-78 | |
|---|---|---|
| 型番 | SISS27DN-T1-GE3 | |
| 標準価格 |
JPY: 212,000
USD: 1,329.82
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| 入り数 | 1set(3000pieces) | |
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| 在庫数 | - | |