64-1916-71 [Discontinued]SI1416EDH-T1-GE3 N-Channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363 Vishay SI1416EDH-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:77 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.8 W
- Maximum Operating Temperature:+150 °C
- CODE No.:919-4264
| Order No. | 64-1916-71 | |
|---|---|---|
| Model No. | SI1416EDH-T1-GE3 | |
| Standard price |
JPY: 85,400
USD: 531.36
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI1416EDH-T1-GE3 N-Channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363 Vishay SI1416EDH-T1-GE3](https://aimg.as-1.co.jp/c/64/1916/71/64191671.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)