64-1916-68 SIRA00DP-T1-GE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay SIRA00DP-T1-GE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:1.35 mΩ
- Minimum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:104 W
- Number of Elements per Chip:1
- CODE No.:919-4246
| Order No. | 64-1916-68 | |
|---|---|---|
| Model No. | SIRA00DP-T1-GE3 | |
| Standard price |
JPY: 694,000
USD: 4,350.28
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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