64-1916-65 SI4190ADY-T1-GE3 N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3
Features
- N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:18 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:2.2 Ω
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:6 W
- Number of Elements per Chip:1
- CODE No.:919-4233
| Order No. | 64-1916-65 | |
|---|---|---|
| Model No. | SI4190ADY-T1-GE3 | |
| Standard price |
JPY: 490,000
USD: 3,071.52
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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