64-1916-63 SI2333DDS-T1-GE3 P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:12 V
- Maximum Drain Source Resistance:19 Ω
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:1.7 W
- Length:3.04mm
- CODE No.:919-4220
| Order No. | 64-1916-63 | |
|---|---|---|
| Model No. | SI2333DDS-T1-GE3 | |
| Standard price |
JPY: 104,000
USD: 651.92
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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