64-1916-60 SI2319CDS-T1-GE3 P-Channel MOSFET, 4.4 A, 40 V, 3-Pin SOT-23 Vishay SI2319CDS-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.4 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:108 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:2.5 W
- Typical Input Capacitance @ Vds:595 pF @ -20 V
- CODE No.:919-4208
| Order No. | 64-1916-60 | |
|---|---|---|
| Model No. | SI2319CDS-T1-GE3 | |
| Standard price |
JPY: 178,000
USD: 1,115.78
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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