64-1916-57 SI4948BEY-T1-GE3 Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
Features
- Dual P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:3.1 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:150 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Maximum Power Dissipation:2.4 W
- Typical Gate Charge @ Vgs:14.5 nC @ 10 V
- CODE No.:919-4198
| Order No. | 64-1916-57 | |
|---|---|---|
| Model No. | SI4948BEY-T1-GE3 | |
| Standard price |
JPY: 352,000
USD: 2,206.48
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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