64-1916-56 [Discontinued]SI4946BEY-T1-GE3 Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC Vishay SI4946BEY-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6.5 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:52 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Maximum Power Dissipation:3.7 W
- Transistor Material:Si
- CODE No.:919-4195
| Order No. | 64-1916-56 | |
|---|---|---|
| Model No. | SI4946BEY-T1-GE3 | |
| Standard price |
JPY: 415,000
USD: 2,601.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI4946BEY-T1-GE3 Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC Vishay SI4946BEY-T1-GE3](https://aimg.as-1.co.jp/c/64/1916/56/64191656.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)