Vishay

64-1916-33 [Discontinued]SIHB22N60E-GE3 N-Channel MOSFET, 21 A, 600 V E Series, 3-Pin D2PAK Vishay SIHB22N60E-GE3

Features

  • N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses

Spec

  • Quantity:1set(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:21 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:180 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:227 W
  • Number of Elements per Chip:1
  • CODE No.:919-0966
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Order No. 64-1916-33
Model No. SIHB22N60E-GE3
Standard price JPY: 20,200 USD: 126.62
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(50pieces)
  Discontinued
Stock in Japan -