64-1915-55 SI4435DDY-T1-GE3 P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8.1 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:24 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Number of Elements per Chip:1
- CODE No.:919-0288
| Order No. | 64-1915-55 | |
|---|---|---|
| Model No. | SI4435DDY-T1-GE3 | |
| Standard price |
JPY: 193,000
USD: 1,209.80
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|