64-1915-49 SI2305CDS-T1-GE3 P-Channel MOSFET, 4.4 A, 8 V, 3-Pin SOT-23 Vishay SI2305CDS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.4 A
- Maximum Drain Source Voltage:8 V
- Maximum Drain Source Resistance:35 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:960 mW
- Length:3.04mm
- CODE No.:919-0269
| Order No. | 64-1915-49 | |
|---|---|---|
| Model No. | SI2305CDS-T1-GE3 | |
| Standard price |
JPY: 89,300
USD: 555.63
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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