64-1915-48 ［Discontinued］SI2308BDS-T1-GE3 N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3
Features
- N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:1.9 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:156 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.09 W
- Width:1.4mm
- CODE No.:919-0266
| Order No. | 64-1915-48 | |
|---|---|---|
| Model No. | SI2308BDS-T1-GE3 | |
| Standard price |
JPY: 146,000
USD: 915.19
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |