64-1915-47 SI2309CDS-T1-GE3 P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:1.2 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:345 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1 W
- Typical Turn-Off Delay Time:15 ns
- CODE No.:919-0262
| Order No. | 64-1915-47 | |
|---|---|---|
| Model No. | SI2309CDS-T1-GE3 | |
| Standard price |
JPY: 182,000
USD: 1,140.85
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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