64-1915-44 ［Discontinued］SI2301CDS-T1-GE3 P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:2.3 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:112 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:860 mW
- Typical Turn-On Delay Time:11 ns
- CODE No.:919-0250
| Order No. | 64-1915-44 | |
|---|---|---|
| Model No. | SI2301CDS-T1-GE3 | |
| Standard price |
JPY: 101,000
USD: 633.55
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |